Publications-Categorized

ENERGY SCIENCE
  1. Arnab Kabiraj and Santanu Mahapatra, “High-throughput first-principles-calculations based estimation of lithium ion storage in monolayer rhenium disulfide”  Communications Chemistry,  Nature publishing group, 2018.
MULTISCALE MODELING

1.Biswapriyo Das and Santanu Mahapatra, “An Atom-to-Circuit modeling approach to all-2D Metal-Insulator Semiconductor Field-Effect Transistors” npj 2D Materials and Applications,Nature publication group, 2018.
2.Madhuchhanda Brahma, Arnab Kabiraj, Dipankar Saha and Santanu Mahapatra, “Scalability assessment of Group-IV mono-chalcogenide based tunnel FET” Scientific Reports Nature publication group, 2018
3.Ramkrishna Ghosh and Santanu Mahapatra, “Monolayer Transition Metal Dichalcogenide Channel Based Tunnel Transistor”, IEEE      Journal of the Electron Devices Society, Vol.1, No.10, pp.175-180 2013.
4.Amretashis Sengupta, Ram Krishna Ghosh, Santanu Mahapatra,”Performance Analysis of Strained Monolayer MoS2 MOSFET,” IEEE Transactions on Electron Devices,Vol. 60, No. 9, pp. 2782 – 2787, 2013.
5.Ram Krishna Ghosh and Santanu Mahapatra,”Proposal for Graphene-Boron Nitride Heterobilayer Based Tunnel FET” , IEEE Transactions on Nanotechnology, Vol.12, No.5, pp. 665-667, 2013.
6.Ramkrishna Ghosh and Santanu Mahapatra, “Direct Band-to-band tunneling in reverse biased MoS2 nanoribbon p-n junctions”, IEEE Transactions on Electron Devices,Vol. 60, No.1, pp. 274-279, 2013.

ATOMISTIC MODELING
  1. Arup Paul , Manabendra Kuiri , Dipankar Saha, Biswanath Chakraborty , Santanu Mahapatra, A.K. Sood and Anindya Das, “Photo-tunable Transfer Characteristics in MoTe2-MoS2 Vertical Hetero-structure” appearing in NPJ 2D Materials and Applications, 2017.
  2. Dipankar Saha and Santanu Mahapatra, “Anisotropic transport in 1T’ monolayer MoS2 and its metal interfaces” RSC Physical Chemistry Chemical Physics, Vol. 19, pp. 10453, 2017.
  3. Dipankar Saha and Santanu Mahapatra, “Asymmetric Junctions in Metallic-Semiconducting-Metallic Heterophase MoS2,” IEEE Transactions on Electron Devices, Vol. 64, No. 5, pp. 2457-2460, 2017.
  4. Dipankar Saha and Santanu Mahapatra “Atomistic modeling of the metallic-to-semiconducting phase boundaries in monolayer MoS2”Applied Physics Letters, Vol 108, pp. 253106, 2016.
  5. Anuja Chanana and Santanu Mahapatra,”Density Functional Theory based Study of Chlorine Doped WS2-metal Interface,” Applied Physics Letters, Vol. 108 , 103107, 2016.
  6. Anuja Chanana and Santanu Mahapatra,”Prospects of Zero Schottky Barrier Height in a Graphene Inserted MoS2-Metal Interface,”Journal of Applied Physics, Vol. 119, pp. 014303, 2016.
  7. Anuja Chanana and Santanu Mahapatra,“Theoretical Insights to Niobium Doped Monolayer MoS2-Gold Contact” IEEE Transactions on Electron Devices, Vol. 10, No. 1, pp. 62-67, 2015.
  8. Anuja Chanana and Santanu Mahapatra,“First Principles Study of Metal Contacts to Monolayer Black Phosphorous” Journal of Applied Physics, Vol.116, pp. 204302 (1-9), 2014.
  9. Amretashis Sengupta, Dipankar Saha, Thomas A. Niehaus and Santanu Mahapatra,“Effect of line defects on the electrical transport properties of monolayer MoS2 sheet,” IEEE Transactions on Nanotechnology, Vol 14, No 1, pp. 51-56, 2015.
  10. Ram Krishna Ghosh, Madhuchhanda Brahma and Santanu Mahapatra,”Germanane : a ‘Low Effective Mass’- ‘High Bandgap’ 2-D Channel Material for Future FETs”, IEEE Transactions on Electron Devices, Vol. 61, No.7 pp 2309-2315, 2014.
  11. Anuja Chanana, Amretashis Sengupta and Santanu Mahapatra,”Performance Analysis of Boron Nitride Embedded Armchair Graphene Nanoribbon MOSFET with Stone Wales Defects”, #2EA3F2Journal Of Applied Physics, Vol. 115, pp. 034501 2014.
  12. Ramkrishna Ghosh, Sitangshu Bhattacharya and Santanu Mahapatra,”k.p based closed form energy band gap and transport electron effective mass model for [100] and [110] relaxed and strained Silicon nanowire”, Solid State Electronics, Vol. 80, pp. 124-134, 2013.
  13. Ramkrishna Ghosh, Sitangshu Bhattacharya and Santanu Mahapatra,” Physics based band gap model for relaxed and strained [100] silicon nanowires”, IEEE Transactions on Electron Devices, Vol. 59, No. 6, pp. 1765-1772, 2012.

1.Ramkrishna Ghosh and Santanu Mahapatra, “Monolayer Transition Metal Dichalcogenide Channel Based Tunnel Transistor”, IEEE      Journal of the Electron Devices Society, Vol.1, No.10, pp.175-180 2013.
2.Amretashis Sengupta, Ram Krishna Ghosh, Santanu Mahapatra,”Performance Analysis of Strained Monolayer MoS2 MOSFET,” IEEE Transactions on Electron Devices,Vol. 60, No. 9, pp. 2782 – 2787, 2013.
3.Ram Krishna Ghosh and Santanu Mahapatra,”Proposal for Graphene-Boron Nitride Heterobilayer Based Tunnel FET” , IEEE Transactions on Nanotechnology, Vol.12, No.5, pp. 665-667, 2013.
4.Ramkrishna Ghosh and Santanu Mahapatra, “Direct Band-to-band tunneling in reverse biased MoS2 nanoribbon p-n junctions”, IEEE Transactions on Electron Devices,Vol. 60, No.1, pp. 274-279, 2013.

DEVICE MODELING
  1. Madhuchhanda Brahma, Marc Bescond, Demetrio Logoteta, Ram Krishna Ghosh and Santanu Mahapatra, “ Germanane MOSFET for sub-Deca Nanometer High Performance Technology Nodes” appearing in IEEE Transactions on Electron Devices 2018.
  2. Amretashis Sengupta,Anuja Chanana and Santanu Mahapatra,“Phonon scattering limited performance of monolayer MoS2 and WSe2 n-MOSFET”, AIP Advances, Vol.5, pp.027101, 2015.
  3. Amretashis Sengupta and Santanu Mahapatra,”Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon MOSFET”, Journal of Applied Physics, Vol.114, pp.194513 2013.
  4. Amrethashis Sengupta and Santanu Mahapatra,”Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors”, Journal of Applied Physics , Vol. 113, pp. 194502, 2013.
  5. Rakesh Kumar P and Santanu Mahapatra , “Analytical Modeling of Quantum Threshold Voltage for Triple Gate MOSFET”, Solid State Electronics, Vol. 54, 1586–1591, 2010.
  6. Rakesh Kumar P and Santanu Mahapatra,”Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor” , IEEE Transactions on Nanotechnology, Vol. 10, No. 1, pp. 121-128, 2010.
  7. Biswajit Ray and Santanu Mahapatra,”Modeling of Channel Potential and Subthreshold Slop of Symmetric Double Gate Transistor”, IEEE Transactions on Electron Devices, Vol. 56, No. 2, pp. 260-266, 2009.
  8. Biswajit Ray and Santanu Mahapatra, “Modeling and analysis of body potential of cylindrical Gate-All-Around nanowire transistor”, IEEE Transactions on Electron Devices, Vol. 55, No. 9, pp. 2409-2416, 2008.
COMPACT MODELING
  1. Ananda Sankar Chakraborty and Santanu Mahapatra, “Compact Model for Low Effective Mass Channel Common Double-Gate MOSFET,” appearing in IEEE Transactions on Electron Devices 2018.
  2. Ananda Sankar Chakraborty and Santanu Mahapatra, “Surface Potential Equation for Low Effective Mass Channel Common Double-Gate MOSFET,” IEEE Transactions on Electron Devices, Vol.64, No.4, pp. 1519-1527, 2017
  3. Neha Sharan and Santanu Mahapatra,”Compact Noise Modeling for Common Double Gate MOSFET Adapted to Gate Oxide Thickness Asymmetry” IET Circuits, Devices & Systems, Vol. 10, No. 1, pp. 62-67, 2016.
  4. Neha Sharan and Santanu Mahapatra, “A Short Channel Common Double Gate MOSFET Model Adapted to Gate Oxide Thickness Asymmetry”, IEEE Transactions on Electron Devices 2014, Vol. 61, No.8, pp. 2732-2737, 2014.
  5. Neha Sharan and Santanu Mahapatra,”Continuity Equation Based Nonquasi-static Charge Model for Independent Double Gate MOSFET” Journal of Computational Electronics (Springer), Vol.13, Issue 2, pp 353-359 2014.
  6. Neha Sharan and Santanu Mahapatra, “Non-Quasi-Static Charge Model for Common Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry”, IEEE Transactions on Electron Devices, Vol. 60, pp. 2419-2422, 2013.
  7. Aby Abraham, Pankaj Thakur and Santanu Mahapatra,”Bipolar Poisson Solution for Independent Double-Gate MOSFET”, IEEE Transactions on Electron Devices , Vol. 60, No.1, pp. 498-501, 2013.
  8. Srivatsava Jandhyala and Santanu Mahapatra, “Inclusion of the Body Doping in the Compact Models for Fully-Depleted Common Double Gate MOSFET Adapted to Gate-oxide Thickness Asymmetry”, IET Electronics Letters , Vol. 48, No. 13, pp. 794, 2012.
  9. Srivatsava Jandhyala, Aby Abraham, Costin Anghel and Santanu Mahapatra, “Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET”, IEEE Transactions on Electron Devices , Vol. 59, No. 7, pp. 1974-1979, 2012.
  10. Srivatsava Jandhyala, Rutwick Kashyap, Costin Anghel and Santanu Mahapatra, “A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry”, IEEE Transactions on Electron Devices, Vol. 59, No. 4, pp. 1002-1007, 2012.
  11. Aby Abraham, Srivatsava Jandhyala and Santanu Mahapatra,”Improvements in Efficiency of Surface Potential Computation for Independent DG MOSFET”, IEEE Transactions on Electron Devices, Vol. 59, No.4, pp. 1199-1202, 2012.
  12. Srivatsava Jandhyala and Santanu Mahapatra,”An efficient robust algorithm for the surface potential calculation of Independent DG MOSFET”, IEEE Transactions on Electron Devices, Vol. 58, No. 6, pp. 1663-1671, 2011.
  13. Pankaj Kumar Thakur and Santanu Mahapatra, “Large Signal Model For Independent DG MOSFET”, IEEE Transactions on Electron Devices, Vol. 58, No. 1, pp. 46-52, 2011.
  14. Sudipta Sarkar, Ananda Shankar Roy and Santanu Mahapatra,”Unified Large and Small Signal Non Quasi-Static Model for Long Channel Symmetric DG MOSFET”, Solid State Electronics, Vol. 54, pp. 1421-1429, 2010.
  15. Avinash Sahoo, Pankaj Kumar Thakur, and Santanu Mahapatra,” A Computationally Efficient Generalized Poisson Solution For Independent Double Gate Transistors”, IEEE Transactions on Electron Devices, Vol. 57, no.3, pp. 632-636, 2010.
ELECTRO-THERMAL MODELING
  1. Dipankar Saha and Santanu Mahapatra,”Theoretical Insights on the electro-thermal transport properties of monolayer MoS2 with line defects” Journal of Applied Physics, Vol. 119, pp.134304, 2016.
  2. Dipankar Saha and Santanu Mahapatra,”Analytical Insight into the Lattice Thermal Conductivity and Heat Capacity of Monolayer MoS2” Physica E, Vol. 83, pp. 455-460, 2016.
  3. Sitangshu Bhattacharya, Dipankar Saha, Aveek Bid, and Santanu Mahapatra, “A Continuous Electrical Conductivity Model for Monolayer Graphene from Near Intrinsic to Far Extrinsic Region,” IEEE Transactions on Electron Devices, Vol. 61, No. 11, pp. 3646 -3653, 2014.
  4. Dipankar Saha, Amretashis Sengupta, Sitangshu Bhattacharya and Santanu Mahapatra,”Impact of Stone-Wales and lattice vacancy defects on the electro-thermal transport of the free standing structure of metallic ZGNR”,Journal of Computational Electronics (Springer), Vol. 13, No. 4, pp. 862-871, 2014.
  5. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra, “Solution of Time Dependent Joule Heat Equation for a Graphene Sheet under Thomson Effect”, IEEE Transactions on Electron Devices, Vol. 60, No. 10, pp. 3548-3554, 2013.
  6. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra ,”Modeling of Temperature and Field Dependent Electron Mobility in a Single Layer Graphene Sheet” , IEEE Transactions on Electron Devices, Vol. 60, No. 8, pp. 2695-2698, 2013.
  7. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra,”Thermoelectric Performance of a Single Layer Graphene Sheet for Energy Harvesting” , IEEE Transactions on Electron Devices, Vol. 60, No.6, pp. 2064-2070, 2013.
  8. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra,”A physics based flexural phonon dependent thermal conductivity model for single layer graphene”, IOP Semiconductor Science and Technology, Vol. 28, pp. 015009 (1-6), 2013.
  9. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra, “Physics-Based Solution for Electrical Resistance of Graphene under Self-Heating Effect”, IEEE Transactions on Electron Devices , Vol. 60, No.1, pp. 502-505, 2013.
  10. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra , “Theoretical Estimation of Electro-migration in Metallic Carbon Nanotubes Considering Self-Heating-Effect” , IEEE Transactions on Electron Devices , Vol. 59, No. 9, pp. 2476-2482, 2012.
  11. Sitangshu Bhattacharya and Santanu Mahapatra,”Quantum Capacitance in Bilayer Graphene Nanoribbon”, Physica E, Vol. 44, Issues 7–8, pp. 1127–1131, 2012.
  12. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra,”Analytical Solution of Joule Heating Equation for Metallic Single Walled Carbon Nanotube Interconnects”, IEEE Transactions on Electron Devices, Vol. 58, No. 11, pp. 3991-3996, 2011.
  13. Sitangshu Bhattacharya, Amalraj Rex and Santanu Mahapatra “Physics Based Thermal Conductivity Model for Metallic Single Walled Carbon Nanotube Interconnects”,IEEE Electron Device Letters , Vol. 32, No. 2, pp. 203-205, 2011.
OTHERS
  1. Sitangshu Bhattacharya and Santanu Mahapatra,“Negative Differential Conductance and Effective Electron Mass in Highly Asymmetric Ballistic Bilayer Graphene Nanoribbon” Physics Letters A, Vol. 374, pp. 2850–2855, 2010.
  2. Sitangshu Bhattacharya and Santanu Mahapatra,“Simplified Theory of Carrier Back-Scattering in Semiconducting Carbon Nanotubes: a Kane’s Model Approach”, Journal of Applied Physics, Vol.107, Issue 9, pp. 094314, 2010. Also published in Virtual Journal of Nanoscale Science & Technology, Vol. 21, Issue 10, 2010
  3. Surya Shankar Dan and Santanu Mahapatra, “Impact of Energy Quantisation in SET Island on Hybrid CMOS-SET Integrated Circuits”, IET Circuits Devices Systems , Vol. 4, Issue 5, pp. 449–457, 2010.
  4. Sivakumar Bondada, Soumyendu Raha and Santanu Mahapatra, An efficient reduction algorithm for computation of interconnect delay variability for statistical timing analysis in clock tree planning, Sadhana – Academy Proceedings in Engineering Science Vol. 35, Part 4, pp. 407–418, 2010.
  5. Sitangshu Bhattacharya and Santanu Mahapatra,”Analytical Study of Low Field Diffusive Transport in Highly Asymmetric Bilayer Graphene Nanoribbon”, IEEE Transactions on Nanotechnology, Vol. 10, No. 3, pp. 409-416, 2010.
  6. Surya Shankar Dan and Santanu Mahapatra,”Impact of Energy Quantization Effects on the Performance of Current-Biased SET Circuits”, IEEE Transactions on Electron Devices , Vol 56, No 8, pp.1562-1566, 2009.
  7. Surya Shankar Dan and Santanu Mahapatra,”Analysis of Energy Quantization Effects on Single Electron Transistor Circuits”, IEEE Transactions on Nanotechnology, Vol.9, No.1, pp. 38-45, 2010.
  8. Surya Shankar Dan and Santanu Mahapatra, “Modeling and Analysis of Energy Quantization Effects on Single Electron Inverter Performance”, Physica E: Low-dimensional Systems and Nanostructures, Vol. 41, Issue 8, Pages 1410-1416, 2009.
  9. Sitangshu Bhattacharya and Santanu Mahapatra,”Influence of Band Non- Parabolicity on Few Ballistic Properties of III-V Quantum Wire Field Effect Transistors Under Strong Inversion”, Journal of Computational and Theoretical Nanoscience, Vol.6, No.7, pp. 1605-1616, 2009.
  10. Ratul Kumar Baruah and Santanu Mahapatra,”Justifying threshold voltage definition for undoped body transistors through “crossover point” concept”, Physica B: Condensed Matter, Volume 404, Issues 8-11, 1 May 2009, Pages 1029-1032.
  11. Sitangshu Bhattacharya, Surya Shankar Dan and Santanu Mahapatra, “Influence of band non-parabolicity on the quantized gate capacitance in delta-doped MODFED of III-V and related materials,” Journal of Applied Physics, Vol. 104, No. 7, pp. 074304-1 to 074304-9, 2008.
  12. Nayan B Patel, Ramesha A and Santanu Mahapatra, “Drive Current Boosting of n-type Tunnel FET with Strained SiGe layer at Source”, Microelectronics Journal, Vol 39, Issue 12, PP. 1671-1677, 2008.
  13. Chaitanya Sathe, Surya Shankar Dan, and Santanu Mahapatra, “Assessment of SET logic Robustness through Noise Margin Modeling”, IEEE Transactions on Electron Devices, Vol. 55, No. 3, pp. 909-915, 2008.
ENERGY SCIENCE
  1. Arnab Kabiraj and Santanu Mahapatra, “High-throughput first-principles-calculations based estimation of lithium ion storage in monolayer rhenium disulfide”  Communications Chemistry,  Nature publishing group, 2018.
MULTISCALE MODELING

1.Biswapriyo Das and Santanu Mahapatra, “An Atom-to-Circuit modeling approach to all-2D Metal-Insulator Semiconductor Field-Effect Transistors” npj 2D Materials and Applications, Nature publication group, 2018.
2.Madhuchhanda Brahma, Arnab Kabiraj, Dipankar Saha and Santanu Mahapatra, “Scalability assessment of Group-IV mono-chalcogenide based tunnel FET” Scientific Reports Nature publication group, 2018
3.Ramkrishna Ghosh and Santanu Mahapatra, “Monolayer Transition Metal Dichalcogenide Channel Based Tunnel Transistor”, IEEE      Journal of the Electron Devices Society, Vol.1, No.10, pp.175-180 2013.
4.Amretashis Sengupta, Ram Krishna Ghosh, Santanu Mahapatra,”Performance Analysis of Strained Monolayer MoS2 MOSFET,” IEEE Transactions on Electron Devices,Vol. 60, No. 9, pp. 2782 – 2787, 2013.
5.Ram Krishna Ghosh and Santanu Mahapatra,”Proposal for Graphene-Boron Nitride Heterobilayer Based Tunnel FET” , IEEE Transactions on Nanotechnology, Vol.12, No.5, pp. 665-667, 2013.
6.Ramkrishna Ghosh and Santanu Mahapatra, “Direct Band-to-band tunneling in reverse biased MoS2 nanoribbon p-n junctions”, IEEE Transactions on Electron Devices,Vol. 60, No.1, pp. 274-279, 2013.

ATOMISTIC MODELING
  1. Arup Paul , Manabendra Kuiri , Dipankar Saha, Biswanath Chakraborty , Santanu Mahapatra, A.K. Sood and Anindya Das, “Photo-tunable Transfer Characteristics in MoTe2-MoS2 Vertical Hetero-structure” appearing in NPJ 2D Materials and Applications, 2017.
  2. Dipankar Saha and Santanu Mahapatra, “Anisotropic transport in 1T’ monolayer MoS2 and its metal interfaces” RSC Physical Chemistry Chemical Physics, Vol. 19, pp. 10453, 2017.
  3. Dipankar Saha and Santanu Mahapatra, “Asymmetric Junctions in Metallic-Semiconducting-Metallic Heterophase MoS2,” IEEE Transactions on Electron Devices, Vol. 64, No. 5, pp. 2457-2460, 2017.
  4. Dipankar Saha and Santanu Mahapatra “Atomistic modeling of the metallic-to-semiconducting phase boundaries in monolayer MoS2”Applied Physics Letters, Vol 108, pp. 253106, 2016.
  5. Anuja Chanana and Santanu Mahapatra,”Density Functional Theory based Study of Chlorine Doped WS2-metal Interface,” Applied Physics Letters, Vol. 108 , 103107, 2016.
  6. Anuja Chanana and Santanu Mahapatra,”Prospects of Zero Schottky Barrier Height in a Graphene Inserted MoS2-Metal Interface,”Journal of Applied Physics, Vol. 119, pp. 014303, 2016.
  7. Anuja Chanana and Santanu Mahapatra,“Theoretical Insights to Niobium Doped Monolayer MoS2-Gold Contact” IEEE Transactions on Electron Devices, Vol. 10, No. 1, pp. 62-67, 2015.
  8. Anuja Chanana and Santanu Mahapatra,“First Principles Study of Metal Contacts to Monolayer Black Phosphorous” Journal of Applied Physics, Vol.116, pp. 204302 (1-9), 2014.
  9. Amretashis Sengupta, Dipankar Saha, Thomas A. Niehaus and Santanu Mahapatra,“Effect of line defects on the electrical transport properties of monolayer MoS2 sheet,” IEEE Transactions on Nanotechnology, Vol 14, No 1, pp. 51-56, 2015.
  10. Ram Krishna Ghosh, Madhuchhanda Brahma and Santanu Mahapatra,”Germanane : a ‘Low Effective Mass’- ‘High Bandgap’ 2-D Channel Material for Future FETs”, IEEE Transactions on Electron Devices, Vol. 61, No.7 pp 2309-2315, 2014.
  11. Anuja Chanana, Amretashis Sengupta and Santanu Mahapatra,”Performance Analysis of Boron Nitride Embedded Armchair Graphene Nanoribbon MOSFET with Stone Wales Defects”, #2EA3F2Journal Of Applied Physics, Vol. 115, pp. 034501 2014.
  12. Ramkrishna Ghosh, Sitangshu Bhattacharya and Santanu Mahapatra,”k.p based closed form energy band gap and transport electron effective mass model for [100] and [110] relaxed and strained Silicon nanowire”, Solid State Electronics, Vol. 80, pp. 124-134, 2013.
  13. Ramkrishna Ghosh, Sitangshu Bhattacharya and Santanu Mahapatra,” Physics based band gap model for relaxed and strained [100] silicon nanowires”, IEEE Transactions on Electron Devices, Vol. 59, No. 6, pp. 1765-1772, 2012.

1.Ramkrishna Ghosh and Santanu Mahapatra, “Monolayer Transition Metal Dichalcogenide Channel Based Tunnel Transistor”, IEEE      Journal of the Electron Devices Society, Vol.1, No.10, pp.175-180 2013.
2.Amretashis Sengupta, Ram Krishna Ghosh, Santanu Mahapatra,”Performance Analysis of Strained Monolayer MoS2 MOSFET,” IEEE Transactions on Electron Devices,Vol. 60, No. 9, pp. 2782 – 2787, 2013.
3.Ram Krishna Ghosh and Santanu Mahapatra,”Proposal for Graphene-Boron Nitride Heterobilayer Based Tunnel FET” , IEEE Transactions on Nanotechnology, Vol.12, No.5, pp. 665-667, 2013.
4.Ramkrishna Ghosh and Santanu Mahapatra, “Direct Band-to-band tunneling in reverse biased MoS2 nanoribbon p-n junctions”, IEEE Transactions on Electron Devices,Vol. 60, No.1, pp. 274-279, 2013.

DEVICE MODELING
  1. Madhuchhanda Brahma, Marc Bescond, Demetrio Logoteta, Ram Krishna Ghosh and Santanu Mahapatra, “ Germanane MOSFET for sub-Deca Nanometer High Performance Technology Nodes” appearing in IEEE Transactions on Electron Devices 2018.
  2. Amretashis Sengupta,Anuja Chanana and Santanu Mahapatra,“Phonon scattering limited performance of monolayer MoS2 and WSe2 n-MOSFET”, AIP Advances, Vol.5, pp.027101, 2015.
  3. Amretashis Sengupta and Santanu Mahapatra,”Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon MOSFET”, Journal of Applied Physics, Vol.114, pp.194513 2013.
  4. Amrethashis Sengupta and Santanu Mahapatra,”Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors”, Journal of Applied Physics , Vol. 113, pp. 194502, 2013.
  5. Rakesh Kumar P and Santanu Mahapatra , “Analytical Modeling of Quantum Threshold Voltage for Triple Gate MOSFET”, Solid State Electronics, Vol. 54, 1586–1591, 2010.
  6. Rakesh Kumar P and Santanu Mahapatra,”Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor” , IEEE Transactions on Nanotechnology, Vol. 10, No. 1, pp. 121-128, 2010.
  7. Biswajit Ray and Santanu Mahapatra,”Modeling of Channel Potential and Subthreshold Slop of Symmetric Double Gate Transistor”, IEEE Transactions on Electron Devices, Vol. 56, No. 2, pp. 260-266, 2009.
  8. Biswajit Ray and Santanu Mahapatra, “Modeling and analysis of body potential of cylindrical Gate-All-Around nanowire transistor”, IEEE Transactions on Electron Devices, Vol. 55, No. 9, pp. 2409-2416, 2008.
COMPACT MODELING
  1. Ananda Sankar Chakraborty and Santanu Mahapatra, “Surface Potential Equation for Low Effective Mass Channel Common Double-Gate MOSFET,” IEEE Transactions on Electron Devices, Vol.64, No.4, pp. 1519-1527, 2017
  2. Neha Sharan and Santanu Mahapatra,”Compact Noise Modeling for Common Double Gate MOSFET Adapted to Gate Oxide Thickness Asymmetry” IET Circuits, Devices & Systems, Vol. 10, No. 1, pp. 62-67, 2016.
  3. Neha Sharan and Santanu Mahapatra, “A Short Channel Common Double Gate MOSFET Model Adapted to Gate Oxide Thickness Asymmetry”, IEEE Transactions on Electron Devices 2014, Vol. 61, No.8, pp. 2732-2737, 2014.
  4. Neha Sharan and Santanu Mahapatra,”Continuity Equation Based Nonquasi-static Charge Model for Independent Double Gate MOSFET” Journal of Computational Electronics (Springer), Vol.13, Issue 2, pp 353-359 2014.
  5. Neha Sharan and Santanu Mahapatra, “Non-Quasi-Static Charge Model for Common Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry”, IEEE Transactions on Electron Devices, Vol. 60, pp. 2419-2422, 2013.
  6. Aby Abraham, Pankaj Thakur and Santanu Mahapatra,”Bipolar Poisson Solution for Independent Double-Gate MOSFET”, IEEE Transactions on Electron Devices , Vol. 60, No.1, pp. 498-501, 2013.
  7. Srivatsava Jandhyala and Santanu Mahapatra, “Inclusion of the Body Doping in the Compact Models for Fully-Depleted Common Double Gate MOSFET Adapted to Gate-oxide Thickness Asymmetry”, IET Electronics Letters , Vol. 48, No. 13, pp. 794, 2012.
  8. Srivatsava Jandhyala, Aby Abraham, Costin Anghel and Santanu Mahapatra, “Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET”, IEEE Transactions on Electron Devices , Vol. 59, No. 7, pp. 1974-1979, 2012.
  9. Srivatsava Jandhyala, Rutwick Kashyap, Costin Anghel and Santanu Mahapatra, “A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry”, IEEE Transactions on Electron Devices, Vol. 59, No. 4, pp. 1002-1007, 2012.
  10. Aby Abraham, Srivatsava Jandhyala and Santanu Mahapatra,”Improvements in Efficiency of Surface Potential Computation for Independent DG MOSFET”, IEEE Transactions on Electron Devices, Vol. 59, No.4, pp. 1199-1202, 2012.
  11. Srivatsava Jandhyala and Santanu Mahapatra,”An efficient robust algorithm for the surface potential calculation of Independent DG MOSFET”, IEEE Transactions on Electron Devices, Vol. 58, No. 6, pp. 1663-1671, 2011.
  12. Pankaj Kumar Thakur and Santanu Mahapatra, “Large Signal Model For Independent DG MOSFET”, IEEE Transactions on Electron Devices, Vol. 58, No. 1, pp. 46-52, 2011.
  13. Sudipta Sarkar, Ananda Shankar Roy and Santanu Mahapatra,”Unified Large and Small Signal Non Quasi-Static Model for Long Channel Symmetric DG MOSFET”, Solid State Electronics, Vol. 54, pp. 1421-1429, 2010.
  14. Avinash Sahoo, Pankaj Kumar Thakur, and Santanu Mahapatra,” A Computationally Efficient Generalized Poisson Solution For Independent Double Gate Transistors”, IEEE Transactions on Electron Devices, Vol. 57, no.3, pp. 632-636, 2010.
ELECTRO-THERMAL MODELING
  1. Dipankar Saha and Santanu Mahapatra,”Theoretical Insights on the electro-thermal transport properties of monolayer MoS2 with line defects” Journal of Applied Physics, Vol. 119, pp.134304, 2016.
  2. Dipankar Saha and Santanu Mahapatra,”Analytical Insight into the Lattice Thermal Conductivity and Heat Capacity of Monolayer MoS2” Physica E, Vol. 83, pp. 455-460, 2016.
  3. Sitangshu Bhattacharya, Dipankar Saha, Aveek Bid, and Santanu Mahapatra, “A Continuous Electrical Conductivity Model for Monolayer Graphene from Near Intrinsic to Far Extrinsic Region,” IEEE Transactions on Electron Devices, Vol. 61, No. 11, pp. 3646 -3653, 2014.
  4. Dipankar Saha, Amretashis Sengupta, Sitangshu Bhattacharya and Santanu Mahapatra,”Impact of Stone-Wales and lattice vacancy defects on the electro-thermal transport of the free standing structure of metallic ZGNR”,Journal of Computational Electronics (Springer), Vol. 13, No. 4, pp. 862-871, 2014.
  5. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra, “Solution of Time Dependent Joule Heat Equation for a Graphene Sheet under Thomson Effect”, IEEE Transactions on Electron Devices, Vol. 60, No. 10, pp. 3548-3554, 2013.
  6. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra ,”Modeling of Temperature and Field Dependent Electron Mobility in a Single Layer Graphene Sheet” , IEEE Transactions on Electron Devices, Vol. 60, No. 8, pp. 2695-2698, 2013.
  7. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra,”Thermoelectric Performance of a Single Layer Graphene Sheet for Energy Harvesting” , IEEE Transactions on Electron Devices, Vol. 60, No.6, pp. 2064-2070, 2013.
  8. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra,”A physics based flexural phonon dependent thermal conductivity model for single layer graphene”, IOP Semiconductor Science and Technology, Vol. 28, pp. 015009 (1-6), 2013.
  9. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra, “Physics-Based Solution for Electrical Resistance of Graphene under Self-Heating Effect”, IEEE Transactions on Electron Devices , Vol. 60, No.1, pp. 502-505, 2013.
  10. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra , “Theoretical Estimation of Electro-migration in Metallic Carbon Nanotubes Considering Self-Heating-Effect” , IEEE Transactions on Electron Devices , Vol. 59, No. 9, pp. 2476-2482, 2012.
  11. Sitangshu Bhattacharya and Santanu Mahapatra,”Quantum Capacitance in Bilayer Graphene Nanoribbon”, Physica E, Vol. 44, Issues 7–8, pp. 1127–1131, 2012.
  12. Rekha Verma, Sitangshu Bhattacharya and Santanu Mahapatra,”Analytical Solution of Joule Heating Equation for Metallic Single Walled Carbon Nanotube Interconnects”, IEEE Transactions on Electron Devices, Vol. 58, No. 11, pp. 3991-3996, 2011.
  13. Sitangshu Bhattacharya, Amalraj Rex and Santanu Mahapatra “Physics Based Thermal Conductivity Model for Metallic Single Walled Carbon Nanotube Interconnects”,IEEE Electron Device Letters , Vol. 32, No. 2, pp. 203-205, 2011.
OTHERS
  1. Sitangshu Bhattacharya and Santanu Mahapatra,“Negative Differential Conductance and Effective Electron Mass in Highly Asymmetric Ballistic Bilayer Graphene Nanoribbon” Physics Letters A, Vol. 374, pp. 2850–2855, 2010.
  2. Sitangshu Bhattacharya and Santanu Mahapatra,“Simplified Theory of Carrier Back-Scattering in Semiconducting Carbon Nanotubes: a Kane’s Model Approach”, Journal of Applied Physics, Vol.107, Issue 9, pp. 094314, 2010. Also published in Virtual Journal of Nanoscale Science & Technology, Vol. 21, Issue 10, 2010
  3. Surya Shankar Dan and Santanu Mahapatra, “Impact of Energy Quantisation in SET Island on Hybrid CMOS-SET Integrated Circuits”, IET Circuits Devices Systems , Vol. 4, Issue 5, pp. 449–457, 2010.
  4. Sivakumar Bondada, Soumyendu Raha and Santanu Mahapatra, An efficient reduction algorithm for computation of interconnect delay variability for statistical timing analysis in clock tree planning, Sadhana – Academy Proceedings in Engineering Science Vol. 35, Part 4, pp. 407–418, 2010.
  5. Sitangshu Bhattacharya and Santanu Mahapatra,”Analytical Study of Low Field Diffusive Transport in Highly Asymmetric Bilayer Graphene Nanoribbon”, IEEE Transactions on Nanotechnology, Vol. 10, No. 3, pp. 409-416, 2010.
  6. Surya Shankar Dan and Santanu Mahapatra,”Impact of Energy Quantization Effects on the Performance of Current-Biased SET Circuits”, IEEE Transactions on Electron Devices , Vol 56, No 8, pp.1562-1566, 2009.
  7. Surya Shankar Dan and Santanu Mahapatra,”Analysis of Energy Quantization Effects on Single Electron Transistor Circuits”, IEEE Transactions on Nanotechnology, Vol.9, No.1, pp. 38-45, 2010.
  8. Surya Shankar Dan and Santanu Mahapatra, “Modeling and Analysis of Energy Quantization Effects on Single Electron Inverter Performance”, Physica E: Low-dimensional Systems and Nanostructures, Vol. 41, Issue 8, Pages 1410-1416, 2009.
  9. Sitangshu Bhattacharya and Santanu Mahapatra,”Influence of Band Non- Parabolicity on Few Ballistic Properties of III-V Quantum Wire Field Effect Transistors Under Strong Inversion”, Journal of Computational and Theoretical Nanoscience, Vol.6, No.7, pp. 1605-1616, 2009.
  10. Ratul Kumar Baruah and Santanu Mahapatra,”Justifying threshold voltage definition for undoped body transistors through “crossover point” concept”, Physica B: Condensed Matter, Volume 404, Issues 8-11, 1 May 2009, Pages 1029-1032.
  11. Sitangshu Bhattacharya, Surya Shankar Dan and Santanu Mahapatra, “Influence of band non-parabolicity on the quantized gate capacitance in delta-doped MODFED of III-V and related materials,” Journal of Applied Physics, Vol. 104, No. 7, pp. 074304-1 to 074304-9, 2008.
  12. Nayan B Patel, Ramesha A and Santanu Mahapatra, “Drive Current Boosting of n-type Tunnel FET with Strained SiGe layer at Source”, Microelectronics Journal, Vol 39, Issue 12, PP. 1671-1677, 2008.
  13. Chaitanya Sathe, Surya Shankar Dan, and Santanu Mahapatra, “Assessment of SET logic Robustness through Noise Margin Modeling”, IEEE Transactions on Electron Devices, Vol. 55, No. 3, pp. 909-915, 2008.